المفاهيم الأساسية
Locally-active Mott memristors exhibit complex behaviors crucial for neuromorphic circuits.
الملخص
Locally-active memristors offer promise for scalable neuromorphic circuits.
Physics-based compact model used for analysis.
Local activity theory applied to understand dynamical behaviors.
Global nonlinear techniques provide insights on instabilities.
Mott memristors based on insulator-to-metal phase transition.
Applications in neuromorphic computing explored.
Challenges in predictive modeling and analysis discussed.
Theoretical techniques applied for understanding circuit dynamics.
Importance of incorporating device physics into mathematical framework emphasized.
الإحصائيات
"Vanadium dioxide (VO2) and niobium dioxide (NbO2) are two intensively-studied Mott memristor materials among many others."
"For the model VO2 device (rch = 36 nm, Lch = 50 nm), Rch(xQ) drops by more than 3 decades from 122.8 kΩ to 97 Ω as iQ increases from 0 to 1 mA."
"Values of ic1 (ic2) are 2.522 µA (269.77 µA), 9.077 µA (971.18 µA) and 14.122 µA (1510.73 µA), respectively."
اقتباسات
"Locally-active memristors offer promise for scalable and energy-efficient neuromorphic circuits."
"Chua’s local activity theory provides a set of criteria for identifying the edge of chaos region."