Kernekoncepter
Locally-active Mott memristors exhibit complex behaviors crucial for neuromorphic circuits.
Statistik
"Vanadium dioxide (VO2) and niobium dioxide (NbO2) are two intensively-studied Mott memristor materials among many others."
"For the model VO2 device (rch = 36 nm, Lch = 50 nm), Rch(xQ) drops by more than 3 decades from 122.8 kΩ to 97 Ω as iQ increases from 0 to 1 mA."
"Values of ic1 (ic2) are 2.522 µA (269.77 µA), 9.077 µA (971.18 µA) and 14.122 µA (1510.73 µA), respectively."
Citater
"Locally-active memristors offer promise for scalable and energy-efficient neuromorphic circuits."
"Chua’s local activity theory provides a set of criteria for identifying the edge of chaos region."