Anand, S., Ramachandran, R., Eom, K., Lee, K., Yang, D., Yu, M., Biswas, S., Nethwewala, A., Eom, C., Carlson, E.W., Irvin, P., & Levy, J. (2024). Electric and Magnetic Field-dependent Tunneling between Coupled Nanowires. arXiv. https://arxiv.org/abs/2410.01936v1
This study investigates the impact of electric and magnetic fields on the tunneling behavior of electrons between coupled nanowires, both theoretically and experimentally.
The researchers developed a theoretical model based on the Wentzel–Kramers–Brillouin (WKB) approximation to calculate the tunneling rate between two coupled nanowires subject to a transverse electric field and an out-of-plane magnetic field. They then compared their theoretical predictions with experimental measurements conducted on coupled nanowires fabricated on a LaAlO3/SrTiO3 (LAO/STO) interface.
The study demonstrates the ability to precisely control electron tunneling between coupled nanowires using external electric and magnetic fields. The theoretical model successfully captures key experimental trends, highlighting the crucial role of the field-dependent interwire potential barrier in governing transport properties.
This research provides valuable insights into the fundamental physics of coupled low-dimensional electron systems. The ability to manipulate electron tunneling in nanowires has significant implications for the development of novel nanoelectronic devices, including quantum simulators and advanced transistors.
The current study focuses on a simplified two-wire system. Future research could explore the complex interplay of electron-electron interactions and disorder effects in larger nanowire arrays. Additionally, investigating the impact of varying temperature and different material systems could further enrich our understanding of these systems.
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by Shashank Ana... at arxiv.org 10-04-2024
https://arxiv.org/pdf/2410.01936.pdfDeeper Inquiries