This research introduces a novel bottom-up approach to synthesize lanthanide MXenes, a new class of 2D materials exhibiting both semiconducting and ferromagnetic properties, paving the way for advancements in spintronic devices.
This research details the successful optimization of electrical contact fabrication processes for BaZrS3 single crystal photodetectors, resulting in devices with significantly reduced dark current and fast photoresponse, paving the way for high-performance optoelectronic devices based on this promising material.
Oxygen vacancies in BaTiO3-based ferroelectrics significantly impact their ferroelectric properties by influencing electron doping, causing history dependence of the Curie temperature (Tc), and pinning domain walls.
The 229Th nuclear isomeric transition can be driven and observed in 229ThF4 thin films, opening up new possibilities for integrated and field-deployable solid-state nuclear clocks with reduced radioactivity.
The selection of alternative metals is a critical challenge for advanced interconnects, requiring consideration of multiple criteria including resistivity at reduced dimensions, reliability, thermal performance, process technology readiness, and sustainability.
Predicting the electrical conductivity of various bi-metal composites, including Cu/Nb, Cu/Ag, Cu/Cr, Cu/Fe, Cu/Ta, and Cu/W, as a function of the volume fraction of the less conductive component to identify promising candidates for ultra-high magnetic field applications.
The direction of the applied electric field can significantly influence the ferroelectric transition temperatures, thermal hysteresis, and the temperature range where large and reversible electrocaloric responses occur in BaTiO3.
Non-stoichiometric addition of vanadium in Fe2P-type (FeMnP0.5Si0.5)1-x(FeV)x alloys can tune the magnetic ordering temperature, thermal hysteresis, and magnetocaloric effect by modifying the Fe-moment localization and magnetoelastic coupling.
The nucleation, crystallization, and growth mechanisms of MnFe2O4, CoFe2O4, NiFe2O4, and ZnFe2O4 nanocrystallites prepared from coprecipitated transition metal hydroxide precursors under hydrothermal conditions have been elucidated using in situ X-ray total scattering and powder X-ray diffraction techniques.
Annealing reduces the flexoelectric coefficient in hafnium oxide (HfO2) due to an increase in oxygen vacancies, which disrupt the uniform polarization response required for strong flexoelectricity.