本文研究了 ZnGeP$_2$ 中體積光伏效應的增強,發現通過調節化學勢,可以顯著提高移位電流和圓形光電流電導率,而費米面狀態在其中起著關鍵作用。
The bulk photovoltaic effect (BPVE) in ZnGeP2 can be significantly enhanced by tuning the chemical potential, which modifies the Fermi surface and leads to increased shift and circular photogalvanic current conductivities.
The shift current in bulk photovoltaic materials is significantly enhanced by excitonic effects, particularly in materials with strong electron-hole interactions, due to the increased likelihood of k-space overlap between nearly-degenerate excitons.