核心概念
本研究展示了一種透過 GaTe 輔助化學氣相沉積法可控合成亞毫米級超薄二維鐵磁 Cr5Te8 奈米片的新方法,探討了其生長機制和磁性,為二維鐵磁材料在自旋電子學和磁存儲器件的應用奠定了基礎。
統計資料
Cr5Te8 奈米片的橫向尺寸高達約 0.19 毫米。
Cr5Te8 奈米片的厚度低至約 4.8 奈米。
Cr5Te8 奈米片的居里溫度為 172 K。
引述
"To the best of our knowledge, this represents the largest lateral size of ultrathin Cr5Te8 nanosheets achieved by CVD to date."
"GaTe may supply the Te source in the form of active Te monomers, so they can react rapidly with metal precursors, obtaining a high lateral growth rate."
"This research paves a way for the controlled synthesis of submillimeter ultrathin non-vdW 2D ferromagnetic crystals and may offer a fresh starting point for spintronics and magnetic memory devices applications."