In this work, the authors introduce a novel dual-port FeFET design to tackle pass disturb in vertical NAND storage. Through simulations and experimental demonstrations, they validate the disturb-free operation in a NAND string. The proposed design shows promise for enabling high-reliability dense storage.
The content delves into the challenges faced by single-port NAND FeFETs regarding pass disturb and how the dual-port design overcomes these issues. By incorporating separate ports for write/read and pass operations, the dual-port FeFET ensures disturbance-free operation. Experimental verifications on both FEOL and BEOL devices confirm the effectiveness of the proposed design.
Furthermore, TCAD simulations are conducted to verify the feasibility of implementing the dual-port operation in practical vertical NAND arrays. The results demonstrate that pass disturb-free operation is achievable in vertical NAND structures. The proposed design is also compatible with existing vertical NAND process integration with minimal overhead.
Overall, this study sheds light on a novel approach to address pass disturb in vertical NAND storage using a dual-port FeFET design, showcasing its potential for enabling high-reliability dense storage solutions.
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by Zijian Zhao,... kl. arxiv.org 03-11-2024
https://arxiv.org/pdf/2403.04981.pdfDybere Forespørgsler