周期的なボソン背景とユーカワ結合から生じるフェルミオン束縛状態
ユーカワ結合とボソン背景の周期性により、フェルミオンスペクトルに複数の束縛状態が現れ、特定のエネルギー固有値周りで束縛状態が集まる効果が生じる。これにより、フェルミオンギャップ内に縮退したエネルギー状態が現れる。
스핀-운동량 잠금 전자의 양자 측지
스핀-운동량 잠금은 스핀-궤도 결합 물질의 표면 및 계면에서 전자 상태의 일반적인 특성이며, 유한한 양자 측지를 유발한다. 이 양자 측지는 평면 자기장에 의해 활성화되는 비선형 면내 자기저항을 유발한다.
スピン運動量ロックを持つ電子の量子メトリック
スピン運動量ロックは一般的な特徴であり、有限の量子メトリックを生み出す。この量子メトリックは平面内の非線形磁気抵抗を活性化する。
Spin-Momentum Locking Endows Quantum Metric Effects in Oxide Interfaces
Spin-momentum locking, a fundamental characteristic of electronic states at surfaces and interfaces of spin-orbit coupled materials, is endowed with a finite quantum metric that activates a nonlinear in-plane magnetoresistance.
Phonon-Magnon Hybridization Drives Thermal Hall Effect in a Honeycomb Antiferromagnet
The thermal Hall effect in the honeycomb antiferromagnet NiPS3 originates from the hybridization between magnons and acoustic phonons, which creates a low-energy gap and enables an intrinsic thermal Hall response.
半導体モアレヘテロ構造における長寿命トポロジカルフラットバンド励起子: ボゾニックKane-Meleモデルプラットフォーム
半導体モアレヘテロ構造において、長寿命かつトポロジカルな励起子モアレバンドを実現する。これは、ボゾニックKane-Meleモデルの固体状態での初めての実現を可能にする。
Long-Lived Topological Flatband Excitons in Semiconductor Moiré Heterostructures: A Bosonic Kane-Mele Model Platform
The proposed semiconductor moiré heterostructure can host long-lived excitons with narrow topological bosonic bands, providing a solid-state realization of the bosonic Kane-Mele model.
Orbital Magnetism and Hall Conductivity in Graphene/Haldane and Haldane/Haldane Bilayers
Broken time-reversal and inversion symmetries in graphene bilayers induce large orbital magnetic moments and lead to the emergence of orbital ferromagnetism and orbital Chern insulators.
Orbital-Selective Effect of Spin Reorientation on the Dirac Fermions in a Non-Charge-Ordered Kagome Ferromagnet Fe3Ge
The spin reorientation in the kagome ferromagnet Fe3Ge has an orbital-selective effect on the Dirac fermions, where the Dirac fermion composed of 3dz2 orbitals evolves from gapped to nearly gapless, while the Dirac fermion with 3dxz/3dyz orbitals remains largely unaffected.
Slow Electron-Phonon Relaxation Governs the Dynamics of the Superconducting Resistive Transition
The dynamics of the superconducting resistive transition in epitaxial TiN thin films is governed by slow electron-phonon relaxation, which puts the system beyond the applicability range of the conventional Ginzburg-Landau theory of superconducting fluctuations. The measured resistance fluctuations reveal spontaneous temperature fluctuations as their origin, with a well-defined correlation time coinciding with the thermal relaxation time.
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