Low-Loss and Broadband Chip-to-Package Transitions for High-Frequency Communication Systems

Core Concepts

This work presents the design and implementation of low-loss and broadband chip-to-package transitions for mm-Wave and sub-THz communication systems, addressing the challenges of high-frequency signal transitions between integrated circuits and packaging.

Abstract

The key highlights and insights from the content are:

Motivation and Technology Choice:

The mm-Wave and sub-THz frequency bands offer large available bandwidths for future communications and sensing systems, but the transition of signals from integrated circuits (ICs) to printed circuit boards (PCBs) becomes increasingly difficult and costly at these high frequencies.
CMOS technology is an attractive choice due to its high yield, low cost, and high integration density, despite the higher fT/fmax of III-V material-based technologies.
Antenna-integrated packages offer higher gain and radiation efficiency, while supporting the large integration needs of massive transceiver arrays.
Organic substrate packages provide a cost-effective alternative to other packaging options, such as low-temperature co-fired ceramic (LTCC) or silicon-based technologies.

Limitations of Conventional GSG Transitions:

The standard coplanar ground-signal-ground (GSG) transition structure becomes very lossy above 100 GHz due to the mismatch between the signal and return current paths, leading to the excitation of parasitic modes and radiation losses.
Analytical modeling and simulations are used to identify the key loss mechanisms, including parallel-plate propagation modes and parasitic loop antenna resonances.

Alternative Transition Structures:

Several modified transition structures are explored, including half-shielded, rectangular shield, fully shielded, reverse microstrip, and stripline designs.
The stripline transition is identified as the most promising solution, providing a practical signal escape and superior performance compared to other practical options.
The limitations of the stripline structure, such as the excitation of substrate-integrated waveguide modes, are analyzed and addressed through design considerations.

Transition Designs and Measurements:

Two chip-to-package transitions are designed and implemented using the stripline approach, one in a 28 nm Bulk CMOS technology with an organic substrate interposer, and the other in a 16 nm FinFET CMOS technology with a different organic substrate interposer.
The 28 nm Bulk CMOS design achieves 1.03 dB loss with an 85 GHz 3 dB bandwidth, while the 16 nm FinFET CMOS design achieves 0.41 dB loss with a 339 GHz 3 dB bandwidth.
Measurement results of the 28 nm Bulk CMOS design validate the analysis and simulation, demonstrating the effectiveness of the proposed transition structures.

Stats

The transition from the 28 nm Bulk CMOS technology to the organic substrate interposer has a measured insertion loss of 1.03 dB with an 85 GHz 3 dB bandwidth.
The transition from the 16 nm FinFET CMOS technology to the organic substrate interposer has a measured insertion loss of 0.41 dB with a 339 GHz 3 dB bandwidth.

Quotes

"The transition of signal from an integrated circuit (IC) to printed circuit board (PCB) becomes increasingly difficult and costly as the signal frequency increases."
"With the trend towards large phased arrays or massive multiple-input multiple-output (MIMO) antenna arrays to compensate for high frequency path losses, the integration of transceivers with antenna elements becomes a challenge."
"While on-chip antennas eliminate the need to transition from the IC to the PCB, due to the excitation of substrate waves and ohmic losses, radiation efficiency and gain remain low."

Key Insights Distilled From

mm-Wave and sub-THz Chip-to-Package Transitions for Communications Systems

by Nima Baniasa... at arxiv.org 05-01-2024

https://arxiv.org/pdf/2404.19263.pdf

Deeper Inquiries

How can the proposed chip-to-package transition designs be further optimized to achieve even lower loss and wider bandwidth

To further optimize the proposed chip-to-package transition designs for even lower loss and wider bandwidth, several strategies can be implemented:

Advanced Matching Networks: Implementing more sophisticated matching networks within the transition structures can help improve impedance matching and reduce insertion loss. Utilizing techniques like stub tuning, coupled-line matching, or distributed matching can enhance the performance of the transitions.

Material Selection: Choosing materials with lower dielectric losses and higher conductivity can help minimize signal attenuation and improve signal integrity. Exploring novel dielectric materials or conductive coatings with superior high-frequency characteristics can lead to lower loss transitions.

Geometry Optimization: Fine-tuning the geometrical parameters of the transition structures, such as bump size, pitch, and layout, can have a significant impact on the overall performance. Conducting extensive electromagnetic simulations and optimizations can help identify the optimal geometry for minimal loss and maximum bandwidth.

Reduced Parasitics: Minimizing parasitic effects, such as radiation losses, substrate modes, and coupling with neighboring components, is crucial for achieving low-loss transitions. Shielding techniques, ground plane optimization, and careful layout design can help mitigate these parasitic effects.

Innovative Packaging Techniques: Exploring novel packaging technologies that offer improved signal integrity and reduced losses, such as advanced interposer materials or 3D integration schemes, can contribute to enhancing the performance of chip-to-package transitions.

By incorporating these optimization strategies and leveraging advanced simulation tools and fabrication techniques, the chip-to-package transition designs can be further refined to achieve lower loss and wider bandwidth capabilities.

What are the potential challenges and trade-offs in integrating multiple heterogeneous technologies (e.g., CMOS, III-V) within a single transceiver system using the presented transition approach

Integrating multiple heterogeneous technologies, such as CMOS and III-V, within a single transceiver system using the presented transition approach poses several challenges and trade-offs:

Impedance Matching: Ensuring proper impedance matching between different technologies can be challenging due to their varying electrical characteristics. Designing transition structures that accommodate the impedance differences and provide seamless signal transfer is crucial but can be complex.

Power Handling: Heterogeneous integration may lead to power handling issues, especially when combining technologies with different power levels or linearity requirements. Balancing the power distribution and ensuring compatibility between components is essential to prevent signal degradation or damage.

Manufacturability: Integrating diverse technologies often involves different fabrication processes, material properties, and packaging requirements. Coordinating these aspects to achieve a cohesive and reliable system can be a logistical challenge, impacting production yield and cost.

Signal Integrity: Maintaining signal integrity across heterogeneous components, especially at high frequencies, requires careful consideration of signal paths, reflections, and losses. Ensuring minimal signal degradation and distortion while transitioning between technologies is critical for system performance.

Complexity and Cost: Integrating multiple technologies can increase system complexity and cost, both in terms of design efforts and manufacturing expenses. Trade-offs between performance, complexity, and cost must be carefully evaluated to achieve an optimal balance.

By addressing these challenges through thorough system-level design, simulation, and testing, the integration of heterogeneous technologies can unlock synergies and performance benefits while managing potential trade-offs effectively.

What are the implications of the chip-to-package transition performance on the overall system-level link budget and capacity for future high-frequency communication networks

The performance of chip-to-package transitions has significant implications on the overall system-level link budget and capacity for future high-frequency communication networks:

Link Budget Impact: The insertion loss of chip-to-package transitions directly affects the signal strength and quality received at the antenna. Lower insertion loss leads to higher received power levels, improving the signal-to-noise ratio (SNR) and overall link budget. Minimizing transition losses is crucial for maximizing the communication range and reliability of the system.

Capacity Considerations: In high-frequency communication systems, where bandwidth demands are substantial, the bandwidth of the chip-to-package transitions plays a critical role in determining the system's capacity. Wider bandwidth transitions enable the transmission of higher data rates and support advanced modulation schemes, enhancing the system's overall capacity and throughput.

System Resilience: Low-loss chip-to-package transitions contribute to the robustness and resilience of the communication system, especially in challenging environments with signal attenuation or interference. By optimizing transition performance, the system can maintain reliable connectivity and data transmission under varying conditions, ensuring consistent performance.

Future Network Scalability: The efficiency and performance of chip-to-package transitions impact the scalability of future high-frequency communication networks. Well-designed transitions that offer low loss and wide bandwidth capabilities pave the way for the deployment of advanced network architectures, such as massive MIMO or mmWave systems, supporting increased network capacity and coverage.

By recognizing the critical role of chip-to-package transitions in system-level performance and capacity, engineers can focus on optimizing these components to enhance the overall functionality and effectiveness of high-frequency communication networks.