This paper investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, also known as memristive devices. The authors apply the calculus of variations and optimal control theory to derive optimal driving protocols for memristive switching under various scenarios:
Unconstrained switching of ideal memristors:
Unconstrained switching of memristive systems:
Constrained switching of ideal memristors:
The authors demonstrate the advantages of their approaches through specific examples and compare the results with those of switching using constant voltage or current. Their findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.
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by Valeriy A. S... alle arxiv.org 04-03-2024
https://arxiv.org/pdf/2404.01507.pdfDomande più approfondite