
The unique polarization properties of wide-bandgap semiconductors like gallium nitride (GaN) enable the use of both the cation and anion faces of the semiconductor wafer for distinct functional devices, unlocking new possibilities for integrated photonic, electronic, and acoustic capabilities.


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A new approach is described for fabricating devices on each of the faces of the same gallium nitride semiconductor wafer, using the cation face for photonic devices and the anion face for electronic devices.

Using both faces of polar semiconductor wafers for functional devices - Nature

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Leveraging Both Surfaces of Polar Semiconductor Wafers for Integrated Photonic and Electronic Devices


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A fast STCO framework that leverages graph neural networks to accelerate TCAD simulations, compact model development, and cell library characterization, enabling comprehensive STCO iterations with significant runtime speedups for emerging and traditional semiconductor technologies.


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Fast System Technology Co-Optimization Framework for Emerging Technologies Using Graph Neural Networks



Efficient cell library characterization using Graph Neural Networks for Design Technology Co-Optimization.


fast-cell-library-characterization-for-design-technology-co-optimization-using-graph-neural-networks


Fast Cell Library Characterization for Design Technology Co-Optimization Using Graph Neural Networks
