The unique polarization properties of wide-bandgap semiconductors like gallium nitride (GaN) enable the use of both the cation and anion faces of the semiconductor wafer for distinct functional devices, unlocking new possibilities for integrated photonic, electronic, and acoustic capabilities.
A fast STCO framework that leverages graph neural networks to accelerate TCAD simulations, compact model development, and cell library characterization, enabling comprehensive STCO iterations with significant runtime speedups for emerging and traditional semiconductor technologies.
Efficient cell library characterization using Graph Neural Networks for Design Technology Co-Optimization.