Surfactant-Mediated Epitaxial Growth of Multilayer Graphene on SiC(0001): A LEEM-IV Study of Layer Homogeneity and Morphology

Increasing the annealing temperature during the borazine-mediated epitaxial growth of graphene on SiC(0001) from 1330°C to 1380°C induces the decoupling of the buffer layer, leading to the formation of twisted bilayer graphene (tBLG) patches within a multilayered graphene structure.