
The unique polarization properties of wide-bandgap semiconductors like gallium nitride (GaN) enable the use of both the cation and anion faces of the semiconductor wafer for distinct functional devices, unlocking new possibilities for integrated photonic, electronic, and acoustic capabilities.


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A new approach is described for fabricating devices on each of the faces of the same gallium nitride semiconductor wafer, using the cation face for photonic devices and the anion face for electronic devices.

Using both faces of polar semiconductor wafers for functional devices - Nature

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Leveraging Both Surfaces of Polar Semiconductor Wafers for Integrated Photonic and Electronic Devices
