Experimental Demonstration and Evaluation of Magnetic Tunnel Junction-Based Computational Random-Access Memory

This work presents the first experimental demonstration of a CRAM array based on magnetic tunnel junctions (MTJs), providing a proof-of-concept and a platform to study key aspects of the technology. It links the application-level accuracy to the gate-level error rate of CRAM, confirming the potential technological relevance and competitiveness of CRAM for applications in conventional domains as well as emerging applications related to machine intelligence.