Core Concepts
Trace oxygen is a key factor determining the growth trajectory and quality of graphene synthesized by low-pressure chemical vapor deposition. Oxygen-free CVD enables fast, highly reproducible, and high-quality graphene growth.
Abstract
The content discusses the challenges with reproducibility and quality of graphene synthesized by chemical vapor deposition (CVD) on copper. It identifies trace oxygen as a critical factor affecting the growth and quality of CVD-grown graphene.
The key highlights are:
Oxygen-free chemical vapor deposition (OF-CVD) synthesis is fast and highly reproducible, with kinetics that can be described by a compact model.
Adding trace oxygen leads to suppressed nucleation and slower/incomplete growth of graphene.
Oxygen affects graphene quality, causing surface contamination, emergence of the Raman D peak, and decreased electrical conductivity.
Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak.
After dry transfer and boron nitride encapsulation, the oxygen-free graphene exhibits electrical transport behavior close to that of exfoliated graphene, including well-developed integer and fractional quantum Hall effects.
The work provides guidance for future CVD system design and operation to achieve increased reproducibility and quality of graphene, which will broadly influence basic research and applications.
Stats
Graphene grown by oxygen-free CVD shows no detectable D peak in Raman spectroscopy.
Oxygen-free graphene after dry transfer and boron nitride encapsulation exhibits room-temperature electrical transport behavior close to that of exfoliated graphene.
A graphite-gated device made with oxygen-free graphene shows well-developed integer and fractional quantum Hall effects.
Quotes
"Oxygen affects graphene quality as assessed by surface contamination, emergence of the Raman D peak and decrease in electrical conductivity."
"Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak."