
Increasing the annealing temperature during the borazine-mediated epitaxial growth of graphene on SiC(0001) from 1330°C to 1380°C induces the decoupling of the buffer layer, leading to the formation of twisted bilayer graphene (tBLG) patches within a multilayered graphene structure.


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surfactant-mediated-epitaxial-growth-of-multilayer-graphene-on-sic-0001-a-leem-iv-study-of-layer-homogeneity-and-morphology-


Surfactant-Mediated Epitaxial Growth of Multilayer Graphene on SiC(0001): A LEEM-IV Study of Layer Homogeneity and Morphology
